MOS tube power loss can even be measured
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November 15 03:01:20, 2024
MOSFET / IGBT switching loss test is a very critical part of the power supply debugging, but many engineers on the measurement of switching losses remain in the artificial perception of perceptual cognition, PFC MOSFET switching losses can only be based on word of mouth experience Repeatedly groping, then how to quantify it?
1.1 Power Loss Principles and Measurements
In general, the power loss diagram of the switch tube is shown in Figure 1. The main energy loss is reflected in the "lead pass" and "closed pass". A small part of the energy is reflected in the "conducting state" and the closed state. The loss is almost zero, negligible.
Figure 1 shows the power loss of the switch tube
The actual measurement waveform is generally shown in Figure 2.
Figure 2 Switching tube real power loss test
1.2 MOSFET and PFC MOSFET Test Differences
For an ordinary MOS tube, the voltage and current waveforms of different periods are almost the same, so the overall power loss only needs to measure one cycle at will. However, for PFC MOS transistors, the voltage and current waveforms of different cycles are not the same, so the accurate evaluation of power loss depends on a longer time (usually greater than 10ms), and the waveform capture of the higher sampling rate (1G sampling rate is recommended). The required storage depth is recommended to be above 10M, and all raw data (not sampling) must be involved in the power loss calculation. The actual measurement screenshot is shown in Figure 3.
Figure 3 PFC MOSFET power loss measurement screenshot